72nd Annual IEEE International Electron Devices Meeting

Hilton San Francisco Union Square

Dec 12 - 17, 2026

Hilton San Francisco Union Square

San Francisco, United States

Dec 12 - 17, 2026

San Francisco, United States

About the Conference

For over 65 years, the IEEE International Electron Devices Meeting has been the premier forum for presenting breakthroughs in semiconductor devices, device physics, process technologies, and emerging computing architectures. Researchers from academia, industry, and government gather annually to share innovations shaping the future of electronics. The 72nd Annual IEEE International Electron Devices Meeting will be held December 12-16, 2026 at the Hilton San Francisco Union Square, San Francisco, CA. The conference program features keynote presentations, technical paper sessions, tutorials, short courses, and industry panels covering the latest breakthroughs in semiconductor devices and nanoelectronics.

Subject Areas

General Topics ADVANCED LOGIC TECHNOLOGY (ALT) EMERGING DEVICE and COMPUTE TECHNOLOGY (EDT) MEMORY TECHNOLOGY (MT) MODELING and SIMULATION (MS) NEUROMORPHIC AND NOVEL COMPUTING (NC) OPTOELECTRONICS, DISPLAYS and IMAGERS (ODI) POWER, MILLIMETER WAVE, and ANALOG TECHNOLGY (PMB) RELIABILITY OF SYSTEMS and DEVICES (RSD) SENSORS, MEMS, and BIOELECTRONICS (SMB)

Keynote Speakers

Naga Chandrasekaran

Executive Vice President – Chief Technology and Operations Officer – General Manager · Intel Foundry

Yunik Son

Vice President of Device Technology Solution · SK Hynix

Fabio Gualandris

President, Quality, Manufacturing & Technology · STMicroelectronics

Important Dates

2026-05-26 Submission Site Open · May 26, 2026 CLOSED

2026-07-19 Submission Deadline · 23:59 PDT, EXTENDED CLOSED

2026-08-03 Late News Paper Submission Open · August 3, 2026 CLOSED

2026-08-18 Late News Paper Submission Deadline · 23:59 PT, Tuesday, August 18 CLOSED

2026-09-09 Paper Acceptance/Rejection Notifications · September 9 NEXT

2026-10-05 IEEE Copyright Form · Log into Mira to complete this form.

2026-11-10 Early Registration Deadline · Last day to register for IEDM at discounted rate; rates increase on November 11

2026-12-12 Conference Dates · December 12-16, 2026

Call For Papers

General Topics

Advanced Logic Technology platform and its diversified applications Advanced memory technologies Advanced packaging, 3D, chiplets, and package-device level interactions Advanced power devices, modules, integration, and systems AI, including Deep Learning and new compute paradigms Devices/circuits/system interaction Devices for RF, 5G/6G, THz and mm-wave Device simulation and modeling for emerging technologies Implantable and wearable devices In-memory computing Neuromorphic computing and AI accelerators Non-charge-based materials, devices and systems Novel materials, increased sustainability, and innovative applications for next generation devices Optoelectronics, displays and imaging systems Quantum computing and sensing devices Reliability and security of electronic devices, circuits, and systems Sensors, MEMS and bioelectronics Silicon Photonics

ADVANCED LOGIC TECHNOLOGY (ALT)

CMOS platform technologies & opportunities Logic device performance and circuit design challenges Advanced, novel process integration schemes and (applications-driven) scaling approaches Innovations and advances in process control and metrology. Design technology co-optimization (DTCO), System technology co-optimization (STCO) GAA (Gate-All-Around) nanosheet-based devices and circuits; novel channel materials. Sequential, monolithic 3D integration, heterogenous chiplets, 2.5/3D integration, thermal management Logic for memory Interconnects (BEOL, Backside power delivery) BEOL compatible transistors

EMERGING DEVICE and COMPUTE TECHNOLOGY (EDT)

2D and devices on low-dimensional materials Novel channel materials and devices Non-CMOS emerging devices Devices for neuromorphic and approximate computing Spintronic and magnetic devices Steep-slope devices Quantum computing devices Topological materials and devices, and phase transitions transistors Emerging state machines, time dynamical systems, approximate computing Novel cryogenic devices

MEMORY TECHNOLOGY (MT)

Advancements in embedded and stand-alone memories Emerging memories 3D memory technologies Memories (such as HBM) for AI or near memory computing applications In-Package Memory for PPA augmentation Memories to break the memory wall Memory-enabled artificial intelligence applications Memory-Logic 3D stacking System-technology co-optimization Memory Pooling and communication New memory hierarchy

MODELING and SIMULATION (MS)

Technology CAD and AI-driven benchmarking Advanced logic and memory device modeling Atomistic material, process, and interconnect simulation Compact models for DTCO and STCO Alternative computing device modeling including Neuromorphic and In-Memory Computing Optoelectronics, display and image systems modeling Sensors, MEMS and bioelectronics modeling Power, millimeter-wave, and analog technology modeling Multi-scale simulation with Generative AI and hybrid techniques Advanced packaging, Chiplet-based, and 3D integration modeling Thermal modeling for high-power density and 3D stacks Low-temperature and quantum-resilient, and quantum device modeling Device modeling for photonics and optical interconnects Device modeling for in-memory and in-sensor computing

NEUROMORPHIC AND NOVEL COMPUTING (NC)

Memory, logic, and nanoelectronic devices featuring novel functions and/or materials, engineered for new and unconventional compute paradigms Analog or digital AI accelerators based on compute-in-memory (CIM) architectures driven by advanced memory technologies, including SRAM, DRAM, Flash, ReRAM, MRAM, PCRAM, ECRAM, ferroelectric memory, and memory selectors Probabilistic and approximate computing enabled by the stochastic behaviors of emerging devices and materials Emerging computing algorithms specifically enabled by memory, logic, and nanoelectronic devices Hardware acceleration for generative AI and LLMs On-chip learning and edge intelligence enabled by novel device dynamics Neuromorphic sensors and in-sensor computing Monolithic 3D and heterogeneous integration for scalable computing Device-algorithm co-optimization

OPTOELECTRONICS, DISPLAYS and IMAGERS (ODI)

Heterogeneous optoelectronic integration including sources, modulators, or detectors Neuromorphic photonics technologies Single photon emitters and detectors Luminescent devices based on new materials including perovskites and quantum dots Displays and imagers for augmented or virtual reality Holographic devices and displays Displays with unconventional form or size Photodetectors and imagers with new materials or flexible platform and printed electronics Imagers with ultra-miniaturized pixels, spectral bandwidth beyond visible, high sensitivity, or high time-resolution, Image sensors with pixels for range sensing, TOF, RGBZ, LIDAR Silicon photonics Photonic devices for quantum computation and sensing Intelligent Image Sensors, Advanced On-chip optics for imagers In-display and under-display Sensors

POWER, MILLIMETER WAVE, and ANALOG TECHNOLGY (PMB)

Power and high speed (microwave to THz devices) devices, modules, and systems Manufacturing processes, device design, modeling, physics, and reliability of power and high-speed devices Fundamental studies on doping, traps, interface states, and device reliability for power and high-speed switching devices Micro and mm-wave devices, such as power amplifiers, low noise amplifiers, switches and mixers. Energy harvesting devices and circuits Wide bandgap and ultra-wide bandgap semiconductors such as SiC, (Al)GaN, diamond, β-Ga2O3, BN Emerging ferroelectric materials and devices: Al(Sc)N, Al(Y)N, … Power devices for applications from automotive and aviation to smart grid Devices and circuits for 5G and 6G Extreme environment power and high-speed devices

RELIABILITY OF SYSTEMS and DEVICES (RSD)

Component-level FEOL/MOL/BEOL characterization and reliability modeling Reliability of conventional and emerging memories Circuits, systems-level reliability, and aging Thermal and PID/charging management in existing and novel process integration Reliability of RF/mm-wave/5G in high-frequency applications Reliability of devices, circuits, and systems for more-than-Moore applications, automotive, aerospace and bio-applications (BioFETs, DNA detection, etc.) Reliability of cryogenic devices for future quantum computing applications Reliability of new materials and/or new architectures for transistors Reliability of advanced 2.5D/3D IC advanced package Design for testing (DFT) / Design for reliability (DFR) solutions for improved reliability Robustness and security of electronic circuits and systems

SENSORS, MEMS, and BIOELECTRONICS (SMB)

Physical, chemical, biological, and multimodal integrated sensors MEMS/NEMS resonators, oscillators, actuators, and inertial microsystems RF MEMS, SAW/BAW, acoustic, and optomechanical devices Energy harvesting, micro-power generation, and on-chip storage Microfluidic, lab-on-chip, BioMEMS, and biomedical microsystems Bioelectronic, implantable, flexible, and soft devices and interfaces Intelligent sensors and microsystems with embedded AI In-sensor computing and in-MEMS computing Wave-based and non-charge-based computing paradigms Phononic, acoustic, and magnetoacoustic devices for RF, sensing, and information processing Extreme-environment microsystems, including sensing, readout, control, and packaging Multifunctional microsystems integrating sensing, actuation, computation, and communication on chip

Publication & Indexing

PublisherIEEE

ProceedingsIEDM Technical Digest

IndexingIEEE Xplore

Conference Organization

Organized by

IEEE Electron Devices Society

Committee

General Chair

Meng-Fan (Marvin) Chang

NTHU/TSMC

Technical Program Chair

Jungwoo Joh

Texas Instruments

Technical Program Vice Chair

Rihito Kuroda

Tohoku University

Publications Chair

Srabanti Chowdhury

Stanford University

Publications Co-Chair

Gaudenzio Meneghesso

University of Padova

Publicity Chair

John Paul Strachan

Forschungszentrum Juelich

Publicity Co-Chair

Sandy Liao

TSMC

Courses Chair

Kang-ill Seo

IBM

Courses Co-Chair (Short Courses)

Geert Eneman

IMEC

Courses Co-Chair (Tutorials)

Uygar Avci

Intel

Focus Session Chair

Olga Spahn

Sandia National Labs

Focus Session Co-Chair

Dechao Guo

IBM

Asian Arrangements Chair

Vita Pi-Ho Hu

National Taiwan University

Asian Arrangements Co-Chair

Sangbum Kim

Seoul National University

European Arrangements Chair

Michael Walt

TU Wien

European Arrangements Co-Chair

Daniele Ielmini

Politecnico di Milano

Virtual Arrangements Chair

Elena Gnani

University of Bologna

Treasurer

Jan Hoentschel

GLOBALFOUNDRIES

Advanced Logic Technology (ALT) SubCommittee Chair

Chung-Hsun Lin

Intel

Emerging Device and Compute Technology (EDT) SubCommittee Chair

Maud Vinet

Quobly

Memory and Technologies (MT) SubCommittee Chair

Johannes Mueller

GlobalFoundries

Modeling and Simulation (MS) SubCommittee Chair

Dongyean Oh

SK Hynix

Neuromorphic and Novel Computing (NC) SubCommittee Chair

Seyoung Kim

POSTECH

Optoelectronics Displays and Imagers (ODI) SubCommittee Chair

Geunsook Park

Apple

Power, Millimeter Wave and Analog Technolgy (PMA) SubCommittee Chair

Zhikai Tang

Texas Instruments

Reliability of Systems and Devices (RSD) SubCommittee Chair

Huimei Zhou

IBM

Sensors Mems and Bioelectronics (SMB) SubCommittee Chair

Roozbeh Tabrizian

University of Michigan

Subcommittee Member

Mocuta Anda

Micron

Vincent Chang

TSMC

Gabriela Dilliway

Qorvo

Naoto Horiguchi

Imec

Lin Hu

Nvidia

Wookhyun Kwon

Samsung

Kwan-Yong Lim

Qualcomm

Tetsu Ohtou

Tokyo Electron

Yusuke Oniki

Rapidus

Shay Rebh

IBM

Changhwan Shin

Korea University

Benoit Bertrand

CEA-Leti

Suraj Cheema

MIT

Ching-Tzu Chen

IBM

Albert Cheng

TSMC

Saptarshi Das

Penn State

Michelly De Sousa

Centro Universitario FEI

Asif Khan

Georgia Tech

Soo Gil Kim

SK Hynix

Suhwan Lim

Samsung

Lian-Mao Peng

Peking University

Gaurav Thareja

Applied Materials

Jens Trommer

Namlab

Attilio Belmonte

Imec

Mattia Boniardi

STMicroelectronics

Katherine Chiang

TSMC

Shoichi Kabuyanagi

Kioxia

Kamal Karda

Micron

Ali Khakifirooz

Intel

Kim Tae Kyun

SK Hynix

Kyunghwan Lee

Samsung

Songhil Lee

Tokyo Electron

Kai-Shin Li

TSRI

Tomoya Saito

Renesas

Yanli Zhang

Infineon

Aryan Afzalian

Imec

Pei-Ying Du

Macronicx

Gianluca Fiori

University of Pisa

Albert Fayrushin

Micron

Mohammad Hasanuzzaman

IBM

Changwook Jeong

UNIST

Raseong Kim

Intel

Gengchiau Liang

NYCU

Xi-Wei Lin

Synopsys

Mathieu Luisier

ETH

Yan Zhang

MIT Lincoln Lab

Valeria Bragaglia

IBM Zurich

Qiangfei Xia

Univ. Massachusetts Amherst

Erika Covi

Royal University Groeningen

Jun Deguchi

Kioxia

Tuo-Hung (Alex) Hou

National Yang Ming Chiao Tung University / TSRI

Mingu Kang

UCSD

Laura Bégon-Lours

ETH Zurich

Ravi Kumar

Infineon

Ming-Hsiu (Eric) Lee

Macronix

Stephan Menzel

FZ Julich

Xin Si

Southeast University of China

Dmitro Strukov

UCSB

Michael Cich

Google

Gauri V. Karve

Imec

Jiwon Lee

POSTECH

Stefan Lischke

IHP microelectronics

Pierre Malinge

STMicroelectronics

Minseok Oh

Anduril Industries

Chao Shen

Fudan University

Haiding Sun

University of Science and Technology of China

Yoshiaki Tashiro

Sony

Masayuki Uchiyama

Omnivision

Daniel Van Blerkom

SWIRLabs

Keita Yasutomi

Shizuoka University

Shamima Afroz

Northrop Grumman

Marina Antoniou

University of Warwick

Julien Buckley

CEA-Leti

Nicholas Dellas

GlobalFoundries

Donald Gajewski

Wolfspeed

Masataka Higashiwaki

Osaka Metropolitan University

Jose Jimenez

Qorvo

Christian Koller

Infineon

Hann-Hue Tsai

National Applied Research Laboratories

Tetsuzo Ueda

Kansai University

Jin Wei

Peking University

Yuhao Zhang

The University of Hong Kong

David Chu

TSMC

Grace Chung

Samsung

Christine Hau-Riege

Marvell

Reika Ichihara

Kioxia

Mario Lanza

University of Singapore

Gabriele Navarro

CEA-Leti

Kai Ni

University of Notre Dame

Kenji Okada

Rapidus

Stephen Ramey

Intel

Sachin Sapatnekar

University of Minnesota

Kechao Tang

Peking University

Tianhao Zhang

Synopsis

Taeko Ando

Ritsumeikan University

Azadeh Ansari

Georgia Institute of Technology

Humberto Campanella

Silicon Austria Labs GmbH

Kathreen Coleman

DEVCOM Army Research Lab

Savannah Elsner

Columbia University

Sophie Giroud

CEA-Leti

Wan-Thai Hsu

Soundskrit

Ming-Huang Li

National Tsing Hua University

Tsuyoshi Minami

University of Tokyo

Gayathri Pillai

Indian Institute of Science